The newly-developed 8Gb LPDDR5 is the latest addition to Samsung’s premium DRAM lineup, which includes 10nm-class 16Gb GDDR6 DRAM and 16Gb DDR5 DRAM.The 8Gb LPDDR5 boasts a data rate of up to 6,400 megabits per second (Mb/s), which is 1.5 times as fast as the mobile DRAM chips used in current flagship mobile devices (LPDDR4X, 4266Mb/s). With the increased transfer rate, the new LPDDR5 can send 51.2 gigabytes (GB) of data, or approximately 14 full-HD video files (3.7GB each), in a second.
The 10nm-class LPDDR5 DRAM will be available in two bandwidths – 6,400Mb/s at a 1.1 operating voltage (V) and 5,500Mb/s at 1.05V – making it the most versatile mobile memory solution for next-generation smartphones and automotive systems. This performance advancement has been made possible through several architectural enhancements. By doubling the number of memory “banks” – subdivisions within a DRAM cell – from eight to 16, the new memory can attain a much higher speed while reducing power consumption. The 8Gb LPDDR5 also makes use of a highly advanced, speed-optimized circuit architecture that verifies and ensures the chip’s ultra-high-speed performance.
Based on its industry-leading bandwidth and power efficiency, the LPDDR5 will be able to power AI and machine learning applications, and will be UHD-compatible for mobile devices worldwide.
Samsung, together with leading global chip vendors, has completed functional testing and validation of a prototype 8GB LPDDR5 DRAM package, which is comprised of eight 8Gb LPDDR5 chips. Leveraging the cutting-edge manufacturing infrastructure at its latest line in Pyeongtaek, Korea, Samsung plans to begin mass production of its next-generation DRAM lineups (LPDDR5, DDR5 and GDDR6) in line with the demands of global customers.
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